Title :
High-speed fully self-aligned single-crystal contacted silicon bipolar transistor
Author :
Glenn, J.L. ; Neudeck, G.W.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A novel high-speed self-aligned npn bipolar transistor fabrication process is presented. Base contacts are formed by epitaxial lateral overgrowth of single-crystal silicon on silicon-dioxide. Impurity-enhanced oxidation of silicon is used to achieve self-alignment of the emitter. Ultra-low resistance p-type base contacts have been fabricated with measured sheet resistances of 19 Omega / Square Operator .
Keywords :
bipolar transistors; oxidation; semiconductor growth; semiconductor technology; vapour phase epitaxial growth; Si; Si-SiO 2; base contacts; emitter self-alignment; epitaxial lateral overgrowth; high-speed self-aligned npn bipolar transistor fabrication process; impurity-enhanced oxidation; measured sheet resistances; single-crystal silicon; ultra-low resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901073
