Title :
3.2 GHz, 0.2 mu m gate CMOS 1/8 dynamic frequency divider
Author :
Kado, Yuichi ; Okazaki, Yasuo ; Suzuki, M. ; Kobayashi, Takehiko
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
A CMOS 1/8 frequency-divider IC operating at up to 3.2 GHz at a suitable supply voltage of 2.0 V has been achieved with 0.2 mu m gate CMOS technology. The IC consists of three T-connected D-type flip-flops and buffers. A clocked inverter type dynamic flip-flop is adopted for the first stage binary frequency divider. A supply voltage of only 1.2 V is sufficient for operation at 2.0 GHz dissipating 4.6 mW. the highest operation frequency of 4.2 GHz is obtained at 3.0 V.
Keywords :
CMOS integrated circuits; frequency dividers; integrated logic circuits; 0.2 micron; 1.2 V; 3 V; 3.2 GHz; 4.6 mW; CMOS 1/8 dynamic frequency divider; IC; T-connected D-type flip-flops; buffers; clocked inverter type dynamic flip-flop; first stage binary frequency divider; gate length; operation frequency; power dissipation; speed performance; supply voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901077