DocumentCode
1540066
Title
Potential of the distributed amplifier as a photo-diode detector amplifier in high bit rate optical communication systems
Author
Aitchison, C.S.
Author_Institution
Dept. of Electr. Eng., Brunel Univ., Uxbridge, UK
Volume
26
Issue
20
fYear
1990
Firstpage
1693
Lastpage
1695
Abstract
The theoretical performance of the common source MESFET amplifier and distributed amplifier as a post photodetector amplifier for use in high bit rate optical communication systems are compared. The calculations suggest that a 7 dB improvement in the noise level may be obtained from the distributed amplifier in this situation in comparison with the conventional common source amplifier.
Keywords
Schottky gate field effect transistors; amplifiers; electron device noise; field effect transistor circuits; optical communication equipment; photodetectors; photodiodes; random noise; MESFET amplifier; conventional common source amplifier; distributed amplifier; equivalent circuits; high bit rate optical communication systems; noise level; photo-diode detector amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901082
Filename
58184
Link To Document