Title :
Potential of the distributed amplifier as a photo-diode detector amplifier in high bit rate optical communication systems
Author_Institution :
Dept. of Electr. Eng., Brunel Univ., Uxbridge, UK
Abstract :
The theoretical performance of the common source MESFET amplifier and distributed amplifier as a post photodetector amplifier for use in high bit rate optical communication systems are compared. The calculations suggest that a 7 dB improvement in the noise level may be obtained from the distributed amplifier in this situation in comparison with the conventional common source amplifier.
Keywords :
Schottky gate field effect transistors; amplifiers; electron device noise; field effect transistor circuits; optical communication equipment; photodetectors; photodiodes; random noise; MESFET amplifier; conventional common source amplifier; distributed amplifier; equivalent circuits; high bit rate optical communication systems; noise level; photo-diode detector amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901082
