Title :
Self-consistent simulation of a high-power 73 GHz integrated IMPATT oscillator
Author :
Anzill, W. ; Goeller, T. ; Kaertner, F.X. ; Russer, P. ; Buechler, J.
Author_Institution :
Tech. Univ., Munchen, Germany
Abstract :
A quasistatic IMPATT diode model for fast time domain oscillator simulations is applied to the simulation of an integrated double drift diode IMPATT oscillator. Comparison with measurements yields agreement within 7 GHz in oscillation frequency and 20 mW in output power over the measured range of DC bias currents.
Keywords :
IMPATT diodes; microwave oscillators; semiconductor device models; simulation; time-domain analysis; 20 mW; 7 GHz; 73 GHz; DC bias currents; fast time domain oscillator simulations; integrated double drift diode IMPATT oscillator; oscillation frequency; output power; quasistatic IMPATT diode model; self-consistent simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901084
