• DocumentCode
    1540077
  • Title

    Self-consistent simulation of a high-power 73 GHz integrated IMPATT oscillator

  • Author

    Anzill, W. ; Goeller, T. ; Kaertner, F.X. ; Russer, P. ; Buechler, J.

  • Author_Institution
    Tech. Univ., Munchen, Germany
  • Volume
    26
  • Issue
    20
  • fYear
    1990
  • Firstpage
    1697
  • Lastpage
    1698
  • Abstract
    A quasistatic IMPATT diode model for fast time domain oscillator simulations is applied to the simulation of an integrated double drift diode IMPATT oscillator. Comparison with measurements yields agreement within 7 GHz in oscillation frequency and 20 mW in output power over the measured range of DC bias currents.
  • Keywords
    IMPATT diodes; microwave oscillators; semiconductor device models; simulation; time-domain analysis; 20 mW; 7 GHz; 73 GHz; DC bias currents; fast time domain oscillator simulations; integrated double drift diode IMPATT oscillator; oscillation frequency; output power; quasistatic IMPATT diode model; self-consistent simulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901084
  • Filename
    58186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1540077