Title :
A high-T/sub c/ Josephson junction on a narrow tungsten line formed by focused ion beam-chemical vapor deposition [of NdBaCuO]
Author :
Morohashi, S. ; Utagawa, T. ; Enomoto, Y.
Author_Institution :
Supercond. Res. Lab., Int. Supercond. Technol. Center, Tokyo, Japan
fDate :
6/1/1997 12:00:00 AM
Abstract :
We have fabricated two types of high-T/sub c/ Josephson junctions using a focused ion beam technique. High-T/sub c/ junctions fabricated using a narrow-focused Ga-ion beam to damage a substrate, resulting in a geometrical defect prior to high-T/sub c/ layer deposition, show flux flow-like characteristics for the SrTiO/sub 3/ substrate. The current-voltage characteristics of the junctions which are fabricated on a narrow tungsten (W) metal layer deposited on both MgO and SrTiO/sub 3/ substrates using a focused ion beam chemical vapor deposition technique are qualitatively consistent with a resistively shunted junction model and show Shapiro steps under microwave irradiation.
Keywords :
Josephson effect; barium compounds; flux flow; focused ion beam technology; high-temperature superconductors; neodymium compounds; plasma CVD; superconducting integrated circuits; superconducting thin films; tungsten; MgO; NdBaCuO-W-MgO; NdBaCuO-W-SrTiO/sub 3/; Shapiro steps; SrTiO/sub 3/; current-voltage characteristics; flux flow-like characteristics; focused ion beam-chemical vapor deposition; geometrical defect; high-T/sub c/ Josephson junction; microwave irradiation; resistively shunted junction model; Argon; Atomic force microscopy; Chemical vapor deposition; Fabrication; Gold; High temperature superconductors; Josephson junctions; Sputter etching; Tungsten; Voltage;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
