DocumentCode
1540415
Title
Continuous-wave high-power (75 mW) operation of a transverse-mode stabilised window-structure 680 nm AlGaInP visible laser diode
Author
Ueno, Yukiko ; Endo, Kazuhiro ; Fujii, Hiromitsu ; Kobayashi, Kaoru ; Hara, Kentaro ; Yuasa, Takeshi
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Kawasaki, Japan
Volume
26
Issue
20
fYear
1990
Firstpage
1726
Lastpage
1728
Abstract
75 mW CW output power was obtained for a transverse-mode stabilised window-structure 680 nm AlGaInP visible laser diode with non-absorbing mirror facets formed by disordering of GaInP natural superlattice. Stable fundamental mode operations were achieved at up to 70 mW, which is 2.3 times as high as previously reported.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; laser modes; semiconductor junction lasers; semiconductor superlattices; 680 nm; 75 mW; AlGaInP; CW output power; III-V semiconductors; disordering; fundamental mode operations; natural superlattice; nonabsorbing mirror facets; transverse-mode stabilised window-structure; visible laser diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901102
Filename
58204
Link To Document