Title :
Continuous-wave high-power (75 mW) operation of a transverse-mode stabilised window-structure 680 nm AlGaInP visible laser diode
Author :
Ueno, Yukiko ; Endo, Kazuhiro ; Fujii, Hiromitsu ; Kobayashi, Kaoru ; Hara, Kentaro ; Yuasa, Takeshi
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Kawasaki, Japan
Abstract :
75 mW CW output power was obtained for a transverse-mode stabilised window-structure 680 nm AlGaInP visible laser diode with non-absorbing mirror facets formed by disordering of GaInP natural superlattice. Stable fundamental mode operations were achieved at up to 70 mW, which is 2.3 times as high as previously reported.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; laser modes; semiconductor junction lasers; semiconductor superlattices; 680 nm; 75 mW; AlGaInP; CW output power; III-V semiconductors; disordering; fundamental mode operations; natural superlattice; nonabsorbing mirror facets; transverse-mode stabilised window-structure; visible laser diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901102
