Title :
Electrically pumped InGaAs quantum dot ring and cylindrical cavity lasers
Author :
Groom, K.M. ; Wilson, L.R. ; Mowbray, D.J. ; Skolnick, M.S. ; Hill, G. ; Steer, M.J. ; Hopkinson, M.
Author_Institution :
Dept. of Phys. & Astron., Sheffield Univ., UK
fDate :
9/27/2001 12:00:00 AM
Abstract :
Operation of an electrically pumped, cylindrical cavity laser containing a stack of five self-assembled InGaAs quantum dot layers is reported. A threshold current density of 47 A cm2 is obtained at 150 K, with whispering gallery mode laser emission observed at ~1.2 eV. Fabrication of a ring cavity via the removal of part of the non-lasing central region of the cylinder results in a 30% reduction in threshold current
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; quantum well lasers; ring lasers; semiconductor quantum dots; 1.2 eV; 150 K; InGaAs; InGaAs quantum dot lasers; electrically pumped lasers; quantum dot cylindrical cavity lasers; quantum dot ring cavity lasers; semiconductor lasers; threshold current density; threshold current reduction; whispering gallery mode laser emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010830
