Optimization of high-T/sub c/ Josephson fluxon-antifluxon transistors based on numerical simulation

Author

Zhang, Y.M. ; Terzioglu, E. ; Beasley, M.R.

Author_Institution

Conductus Inc., Sunnyvale, CA, USA

Volume

7

Issue

2

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

2611

Lastpage

2614

Abstract

A Josephson fluxon-antifluxon transistor (JFAT) can be constructed utilizing high-T/sub c/ bicrystal or SNS long junctions with a control line on top of the junction, This device can be modeled numerically by solving the perturbed sine-Gordon equation. A JFAT has a higher current gain and a faster transient response compared to a conventional Josephson flux-flow transistor which has a U-shaped control line on top of the long junction. Dependences of the control characteristics on the width and the location of the control line, as well as on the junction length are calculated. The influence of a superconducting ground plane on device characteristics are also discussed. These results are important to the design of high-T/sub c/ digital circuits based on JFATs.

Keywords

Josephson effect; flux flow; high-temperature superconductors; sine-Gordon equation; superconducting integrated circuits; superconducting junction devices; superconducting transistors; transient response; JFAT; Josephson fluxon-antifluxon transistors; SNS long junctions; U-shaped control line; current gain; device characteristics; digital circuits; high-T/sub c/ bicrystal; junction length; numerical simulation; perturbed sine-Gordon equation; superconducting ground plane; transient response; Digital circuits; Equations; Josephson junctions; Microwave transistors; Numerical models; Numerical simulation; Superconducting devices; Superconducting microwave devices; Transient response; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.621774

Filename

621774