Title :
High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers
Author :
Knigge, A. ; Zorn, M. ; Wenzel, H. ; Weyers, M. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fDate :
9/27/2001 12:00:00 AM
Abstract :
Record high continuous-wave output power of 3.1 mW and peak wall-plug efficiency of 14% at the wavelength of 650 nm have been achieved from oxide-confined AlGaInP-AlGaAs vertical-cavity surface-emitting lasers. At a wavelength of 657 nm laser emission is detected up to 60°C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; surface emitting lasers; 14 percent; 3.1 mW; 60 C; 650 nm; 657 nm; AlGaInP-AlGaAs; AlGaInP-based VCSEL; continuous-wave output power; high efficiency semiconductor lasers; oxide-confined AlGaInP/AlGaAs VCSEL; peak wall-plug efficiency; surface-emitting lasers; vertical-cavity SEL;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010831
