DocumentCode
1540544
Title
Complete monolithic integrated 2.5 Gbit/s optoelectronic receiver with large area MSM photodiode for 850 nm wavelength
Author
Lang, M. ; Bronner, W. ; Benz, W. ; Ludwig, M. ; Hurm, V. ; Kaufel, G. ; Leuther, A. ; Rosenzweig, J. ; Schlechtweg, M.
Author_Institution
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Volume
37
Issue
20
fYear
2001
fDate
9/27/2001 12:00:00 AM
Firstpage
1247
Lastpage
1249
Abstract
A novel optoelectronic receiver chip for a data rate of 2.5 Gbit/s has been developed and tested. It integrates a metal-semiconductor-metal photodiode with a GaAs transimpedance amplifier, a high gain amplifier and a limiting output buffer which is able to drive a 50 Ω load. A special feature of the chip is that it comprises a very large photodiode of 300 μm diameter, eliminating the need for expensive fibre alignment. Measurements reveal that the receiver achieves the required sensitivity of -15.7 dBm at a bit error rate of 109
Keywords
integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodiodes; 2.5 Gbit/s; 850 nm; GaAs; GaAs transimpedance amplifier; high-gain amplifier; large-area MSM photodiode; limiting output buffer; monolithic integration; optoelectronic receiver;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010859
Filename
956685
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