High performance superlattice coupled quantum well infrared photodetector for long wavelength infrared detection

Author

Moon, Junhee ; Li, Sheng S. ; Lee, Jung Hee

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

37

Issue

20

fYear

2001

fDate

9/27/2001 12:00:00 AM

Firstpage

1249

Lastpage

1250

Abstract

A high performance InGaAs/GaAs/AlGaAs superlattice coupled (SC) quantum well infrared photodetector (QWIP) grown on GaAs has been developed for long wavelength infrared detection. The dark I-V and spectral response were measured and analysed on this device. Excellent responsivity and detectivity were obtained for this SC-QWIP. The peak detectivity (D*) and collection quantum efficiency (η_g) under background limited performance (BLIP) condition were found to be D*_BLIP=8.36×10¹⁰ cm-Hz^1/2/W and η_g=18.8% at λ_p=10.5 μm, V_h=2.5 V, and T=20 K

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; semiconductor superlattices; 10.5 micron; 18.8 percent; 2.5 V; 20 K; InGaAs-GaAs-AlGaAs; InGaAs/GaAs/AlGaAs superlattice coupled quantum well infrared photodetector; background limited performance; collection quantum efficiency; dark I-V characteristics; detectivity; long wavelength infrared detection; responsivity; spectral response;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010826

Filename

956686