• DocumentCode
    1540586
  • Title

    High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance

  • Author

    Kim, Woonyun ; Lee, Kyungho ; Chung, Minchul ; Kang, Jongchan ; Kim, Bumman

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., South Korea
  • Volume
    37
  • Issue
    20
  • fYear
    2001
  • fDate
    9/27/2001 12:00:00 AM
  • Firstpage
    1259
  • Lastpage
    1261
  • Abstract
    A new layout for high-speed AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is presented. The layout is horseshoe shaped and designed to simultaneously reduce base resistance (RB) and base-collector capacitance (CBC). A horseshoe-shaped HBT and a conventional single-finger HBT with the same emitter width of 2 μm were fabricated and tested. The reduction of RB and CBC using the horseshoe-shaped HBT resulted in a 25% improvement of the maximum oscillation frequency (fmax=130 GHz)
  • Keywords
    III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; heterojunction bipolar transistors; millimetre wave bipolar transistors; 130 GHz; 2 micron; AlGaAs-GaAs; AlGaAs/GaAs HBTs; HBT layout; base resistance reduction; base-collector capacitance reduction; heterojunction bipolar transistors; high-speed HBTs; horseshoe shaped layout; maximum oscillation frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010835
  • Filename
    956693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1540586