Inductively-loaded half-bridge inverter characterisation of 4H-SiC merged PiN/Schottky diodes up to 230 A and 250°C

4H-SiC merged PiN/Schottky diodes were characterised in an inductively-loaded half-bridge inverter circuit at high current and high temperatures (high-T) for the first time. Results show that the replacement of Si freewheeling diodes by SiC diodes results in far less storage charges in the freewheeling diodes and substantial reduction in diode turn-off energy loss, especially at high-T