Title :
InGaP/GaAs power heterostructure-emitter bipolar transistor
Author :
Yan, B.P. ; Yang, E.S. ; Yang, Y.F. ; Wang, X.Q. ; Hsu, C.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
fDate :
9/27/2001 12:00:00 AM
Abstract :
The first microwave large-signal power results measured from InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT) are reported. A continuous wave output power of 0.25 W with power added efficiency of 63.5%, at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 μm2. The experimental results demonstrate the excellent power performance and capability of HEBTs
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; power bipolar transistors; 0.25 W; 1.9 GHz; 26-finger HEBT; 63.5 percent; InGaP-GaAs; InGaP/GaAs power bipolar transistor; microwave large-signal power results; power added efficiency; power heterostructure-emitter bipolar transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010840
