DocumentCode :
1540607
Title :
Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well
Author :
Gopal, A.V. ; Yoshida, H. ; Neogi, A. ; Mozume, T. ; Georgiev, N. ; Simoyama, T. ; Wada, O. ; Ishikawa, H.
Author_Institution :
Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Volume :
37
Issue :
20
fYear :
2001
fDate :
9/27/2001 12:00:00 AM
Firstpage :
1265
Lastpage :
1267
Abstract :
Wavelength dependence of the intersubband absorption saturation in InGaAs/AlAsSb quantum wells is presented. Large intersubband nonlinearity at 1.72 μm With the estimated saturation intensity as low as 4 MW/m2 was observed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical switches; semiconductor quantum wells; 1.72 micron; InGaAs-AlAsSb; InGaAs/AlAsSb quantum well; all-optical switches; intersubband saturation intensity; semiconductor QW; wavelength dependence;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010844
Filename :
956697
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1540607
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