• DocumentCode
    1540607
  • Title

    Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well

  • Author

    Gopal, A.V. ; Yoshida, H. ; Neogi, A. ; Mozume, T. ; Georgiev, N. ; Simoyama, T. ; Wada, O. ; Ishikawa, H.

  • Author_Institution
    Femtosecond Technol. Res. Assoc., Tsukuba, Japan
  • Volume
    37
  • Issue
    20
  • fYear
    2001
  • fDate
    9/27/2001 12:00:00 AM
  • Firstpage
    1265
  • Lastpage
    1267
  • Abstract
    Wavelength dependence of the intersubband absorption saturation in InGaAs/AlAsSb quantum wells is presented. Large intersubband nonlinearity at 1.72 μm With the estimated saturation intensity as low as 4 MW/m2 was observed
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical switches; semiconductor quantum wells; 1.72 micron; InGaAs-AlAsSb; InGaAs/AlAsSb quantum well; all-optical switches; intersubband saturation intensity; semiconductor QW; wavelength dependence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010844
  • Filename
    956697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1540607