DocumentCode
1540658
Title
Low frequency voltage noise in high temperature superconductor Josephson junctions
Author
Marx, A. ; Alff, L. ; Gross, R.
Author_Institution
II. Phys. Inst., Koln Univ., Germany
Volume
7
Issue
2
fYear
1997
fDate
6/1/1997 12:00:00 AM
Firstpage
2719
Lastpage
2722
Abstract
We have performed detailed measurements of 1/f voltage noise in a variety of bicrystal grain boundary Josephson junctions and in ramp edge junctions with artificial barriers. Fluctuations of the junction critical current I/sub c/ and the normal state resistance R/sub n/ were found to fully account for the measured 1/f noise. For the normalized fluctuations S/sub I/ and S/sub R/, which were found to be independent of temperature, a linear scaling with R/sub n/ has been observed. Correlation experiments proved that the fluctuations of I/sub c/ and R/sub n/ are anti-phase correlated. The ratio S/sub I//S/sub R/ of the normalized fluctuations is in close agreement with the scaling of the I/sub c/R/sub n/-product indicating a common underlying physical mechanism. Our analysis strongly supports the Intrinsically Shunted Junction (ISJ) model based on an insulating grain boundary containing a high density of localized defect states with fluctuating electron occupation causing 1/f noise. The effective charge trapping time within single traps shows thermally activated behavior and was found to decay exponentially with increasing bias voltage.
Keywords
1/f noise; Josephson effect; critical current density (superconductivity); electron traps; grain boundaries; high-temperature superconductors; superconducting device noise; superconducting device testing; 1/f voltage noise; Josephson junctions; anti-phase correlation; bias voltage; bicrystal grain boundary Josephson junctions; effective charge trapping time; fluctuating electron occupation; high temperature superconductor; insulating grain boundary; intrinsically shunted junction model; junction critical current; linear scaling; localized defect states; low frequency voltage noise; normal state resistance; ramp edge junctions; thermally activated behavior; Acoustical engineering; Electrical resistance measurement; Fluctuations; Frequency; Grain boundaries; High temperature superconductors; Low voltage; Low-frequency noise; Noise measurement; Superconducting device noise;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.621799
Filename
621799
Link To Document