Accurate and robust noise-based trigger algorithm for soft breakdown detection in ultrathin gate dielectrics

Author

Roussel, Philippe J. ; Degraeve, Robin ; Van den Bosch, Geert ; Kaczer, Ben ; Groeseneken, Guido

Author_Institution

IMEC, Leuven, Belgium

Volume

1

Issue

2

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

120

Lastpage

127

Abstract

Oxide breakdown is one of the most threatening failure mechanisms in integrated circuits. As the oxide thickness is decreased in the sub-5-nm range, the breakdown definition, itself is no longer clear and its detection becomes problematic. A new algorithm for accurate and robust automatic triggering on soft breakdown (SBD) during constant voltage stress based on gate current noise increase is presented. Triggering on current spikes or pre-BD events is avoided. This test assures correct automatic SBD detection in a wide range of stress conditions and various geometries, with an execution speed that provides acceptable time resolution

Keywords

MIS devices; MOS integrated circuits; MOSFET; dielectric thin films; electronic engineering computing; integrated circuit noise; integrated circuit reliability; semiconductor device breakdown; semiconductor device noise; semiconductor device reliability; 5 nm; automatic triggering; constant voltage stress; failure mechanisms; gate current noise increase; integrated circuits; oxide breakdown; oxide thickness; robust noise-based trigger algorithm; soft-breakdown detection; ultrathin gate dielectrics; ultrathin oxides; Automatic testing; Breakdown voltage; Carbon capture and storage; Dielectric breakdown; Electric breakdown; Geometry; Integrated circuit noise; Joining processes; Noise robustness; Thermal stresses;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/7298.956706

Filename

956706