A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

Author

Loquai, Sven ; Bunge, Christian-Alexander ; Ziemann, Olaf ; Schmauss, Bernhard ; Kruglov, Roman

Author_Institution

Polymer Opt. Fiber Applic. Center (POF-AC), Nuernberg, Germany

Volume

28

Issue

18

fYear

2010

Firstpage

2646

Lastpage

2653

Abstract

A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion- and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to -35 dB).

Keywords

carrier lifetime; frequency response; p-i-n photodiodes; silicon; diffusion effects; drift effects; frequency response; large area silicon p-i-n photodiodes; parasitic effects; short wavelength; system analysis; wavelength 405 nm to 850 nm; Analytical models; Bandwidth; Contact resistance; Frequency; Nonlinear equations; PIN photodiodes; Photoconductivity; Poisson equations; Silicon; Transfer functions; Analytic model; large area; p-i-n photodetector; short wavelength;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2010.2059372

Filename

5512541