• DocumentCode
    1541732
  • Title

    340-W Peak Power From a GaSb 2- \\mu m Optically Pumped Semiconductor Laser (OPSL) Grown Mismatched on GaAs

  • Author

    Lai, Yi-Ying ; Yarborough, J.M. ; Kaneda, Yushi ; Hader, Jörg ; Moloney, Jerome V. ; Rotter, T.J. ; Balakrishnan, G. ; Hains, C. ; Koch, S.W.

  • Author_Institution
    Coll. of Opt. Sci., Univ. of Arizona, Tucson, AZ, USA
  • Volume
    22
  • Issue
    16
  • fYear
    2010
  • Firstpage
    1253
  • Lastpage
    1255
  • Abstract
    A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.
  • Keywords
    gallium arsenide; gallium compounds; optical pumping; semiconductor lasers; solid lasers; surface emitting lasers; GaAs; GaSb; YAG:Nd; frequency 1 kHz; optically pumped semiconductor laser; power 340 W; time 100 ns to 160 ns; vertical external cavity laser; wavelength 1.064 mum; wavelength 2 mum; Gallium arsenide; laser cavity resonators; optical pumping; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2052596
  • Filename
    5512584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1541732