DocumentCode :
1541732
Title :
340-W Peak Power From a GaSb 2- 
m Optically Pumped Semiconductor Laser (OPSL) Grown Mismatched on GaAs
Author :
Lai, Yi-Ying ; Yarborough, J.M. ; Kaneda, Yushi ; Hader, Jörg ; Moloney, Jerome V. ; Rotter, T.J. ; Balakrishnan, G. ; Hains, C. ; Koch, S.W.
Author_Institution :
Coll. of Opt. Sci., Univ. of Arizona, Tucson, AZ, USA
Volume :
22
Issue :
16
fYear :
2010
Firstpage :
1253
Lastpage :
1255
Abstract :
A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained.
Keywords :
gallium arsenide; gallium compounds; optical pumping; semiconductor lasers; solid lasers; surface emitting lasers; GaAs; GaSb; YAG:Nd; frequency 1 kHz; optically pumped semiconductor laser; power 340 W; time 100 ns to 160 ns; vertical external cavity laser; wavelength 1.064 mum; wavelength 2 mum; Gallium arsenide; laser cavity resonators; optical pumping; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2052596
Filename :
5512584
Link To Document :
