The field-effect transistor — An old device with new promise
Author :
Wallmark, J.T.
Author_Institution :
Radio Corporation of America
Volume :
1
Issue :
3
fYear :
1964
fDate :
3/1/1964 12:00:00 AM
Firstpage :
182
Lastpage :
192
Abstract :
Fabrication by evaporation, insulated-gate construction, and predictable performance are contributing to the emergence from obscurity of the unipolar field-effect transistor
