مرکز منطقه ای اطلاع رساني علوم و فناوري - Improved Linearity for Low-Noise Applications in 0.25-<formula formulatype="inline"> <img src="/images/tex/19427.gif" alt=" \\mu\\hbox {m}"> </formula> GaN MISHEMTs Using ALD <formula formulatype="inline"> <img src="/images/tex/19428.gif" alt="\\hbox {Al}

Title :

Improved Linearity for Low-Noise Applications in 0.25- $\\mu\\hbox {m}$ GaN MISHEMTs Using ALD $\\hbox {Al}</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Liu, Z.H. ; Ng, G.I. ; Arulkumaran, S. ; Maung, Y.K.T. ; Teo, K.L. ; Foo, S.C. ; Sahmuganathan, V.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>31</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>8</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2010</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>803</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>805</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Improved device linearity for low-noise applications has been demonstrated in 0.25-μm AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) using atomic-layer-deposited (ALD) Al<sub>2</sub>O<sub>3</sub> as gate dielectric. The measured dc transconductance, microwave small signal, and noise performance feature less dependence on drain current as compared to conventional Schottky-gate AlGaN/GaN HEMTs. Two-tone intermodulation measurement shows that the MISHEMT has a higher value of third-order intercept (IP3). The improved device linearity suggests that the ALD Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MISHEMT on high-resistivity silicon substrate is promising for high-linearity low-noise amplifier applications.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MIS devices; Schottky gate field effect transistors; alumina; aluminium compounds; atomic layer deposition; gallium compounds; high electron mobility transistors; low noise amplifiers; wide band gap semiconductors; Al<sub>2</sub>O<sub>3</sub>; AlGaN-GaN; DC transconductance; GaN MISHEMT; Schottky-gate AlGaN-GaN HEMT; atomic-layer-deposition; gate dielectric; high-linearity low-noise amplifier; high-resistivity silicon substrate; metal-insulator-semiconductor high-electron-mobility transistors; size 0.25 mum; third-order intercept; two-tone intermodulation measurement; <formula formulatype=$ $hbox{Al}_{2}hbox{O}_{3}$; GaN; atomic-layer-deposited (ALD); high-electron-mobility transistor (HEMT); linearity; noise;