• DocumentCode
    1541766
  • Title

    Improved Linearity for Low-Noise Applications in 0.25- \\mu\\hbox {m} GaN MISHEMTs Using ALD \\hbox {Al}</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Liu, Z.H. ; Ng, G.I. ; Arulkumaran, S. ; Maung, Y.K.T. ; Teo, K.L. ; Foo, S.C. ; Sahmuganathan, V.</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>31</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>8</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2010</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>803</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>805</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Improved device linearity for low-noise applications has been demonstrated in 0.25-μm AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) using atomic-layer-deposited (ALD) Al<sub>2</sub>O<sub>3</sub> as gate dielectric. The measured dc transconductance, microwave small signal, and noise performance feature less dependence on drain current as compared to conventional Schottky-gate AlGaN/GaN HEMTs. Two-tone intermodulation measurement shows that the MISHEMT has a higher value of third-order intercept (IP3). The improved device linearity suggests that the ALD Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MISHEMT on high-resistivity silicon substrate is promising for high-linearity low-noise amplifier applications.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MIS devices; Schottky gate field effect transistors; alumina; aluminium compounds; atomic layer deposition; gallium compounds; high electron mobility transistors; low noise amplifiers; wide band gap semiconductors; Al<sub>2</sub>O<sub>3</sub>; AlGaN-GaN; DC transconductance; GaN MISHEMT; Schottky-gate AlGaN-GaN HEMT; atomic-layer-deposition; gate dielectric; high-linearity low-noise amplifier; high-resistivity silicon substrate; metal-insulator-semiconductor high-electron-mobility transistors; size 0.25 mum; third-order intercept; two-tone intermodulation measurement; <formula formulatype=$hbox{Al}_{2}hbox{O}_{3}$; GaN; atomic-layer-deposited (ALD); high-electron-mobility transistor (HEMT); linearity; noise;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2051136
  • Filename
    5512591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1541766