DocumentCode
1541789
Title
Demonstration of Common–Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors
Author
Miyake, Hiroki ; Kimoto, Tsunenobu ; Suda, Jun
Author_Institution
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Volume
31
Issue
9
fYear
2010
Firstpage
942
Lastpage
944
Abstract
We report here on the fabrication and characterization of new aluminum gallium nitride (AlGaN)/silicon carbide heterojunction bipolar transistors (HBTs). In the HBTs, AlN/GaN short-period superlattice (quasi-AlGaN) was employed as the widegap emitter. We have successfully demonstrated band-offset control and the first common-emitter-mode operation (β ~ 2.7) in the HBTs.
Keywords
aluminium compounds; gallium compounds; heterojunction bipolar transistors; silicon compounds; AlGaN-SiC; HBT; band-offset control; common-emitter-mode operation; heterojunction bipolar transistors; Aluminum gallium nitride; Current density; Electrons; Fabrication; Gallium nitride; Heterojunction bipolar transistors; III-V semiconductor materials; Photonic band gap; Silicon carbide; Superlattices; Aluminum gallium nitride (AlGaN); common–emitter mode; current gain; heterojunction bipolar transistor (HBT); silicon carbide (SiC);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2052012
Filename
5512595
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