A Molecular-Rotor Device for Nonvolatile High-Density Memory Applications

Author

Xue, Mei ; Kabehie, Sanaz ; Stieg, Adam Z. ; Tkatchouk, Ekaterina ; Benitez, Diego ; Goddard, William A. ; Zink, Jeffrey I. ; Wang, Kang L.

Author_Institution

California NanoSystems Inst., Univ. of California, Los Angeles, CA, USA

Volume

31

Issue

9

fYear

2010

Firstpage

1047

Lastpage

1049

Abstract

A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 10⁴, a read window of about 2.5 V, and retention performance of greater than 10⁴ s. The analysis of the device I-V characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.

Keywords

random-access storage; I-V characteristics; bistable switching effects; copper metal center; electrically molecular rotor device; nonvolatile high-density memory applications; organic monolayer device; read window; redox-induced ligand rotation; Axles; Copper compounds; Costs; Fabrication; Nonvolatile memory; Scalability; Self-assembly; Stators; Switches; Temperature dependence; Molecular rotor; monolayer; nonvolatile memory; redox-induced rotation; resistive switching; tunneling transport;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2052018

Filename

5512600