Effect of microstructure on via extrusion profile and reliability implication for copper through-silicon vias (TSVs) structures

Author

Tengfei Jiang ; Chenglin Wu ; Im, Jay ; Rui Huang ; Ho, Paul S.

Author_Institution

Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA

fYear

2014

fDate

20-23 May 2014

Firstpage

377

Lastpage

380

Abstract

In this work, the effect of grain structure on TSV extrusion and its reliability implication are investigated through experimental measurements and modeling analysis. The grain orientation, elastic anisotropy and local plasticity are found to be important in controlling the extrusion profile which can directly impact the back-end-of-line (BEOL) reliability. Results from this study suggest that the Cu microstructure should be optimized from both global and local aspects in order to minimize the extrusion damage to the 3D structure.

Keywords

copper; extrusion; integrated circuit measurement; integrated circuit modelling; integrated circuit reliability; three-dimensional integrated circuits; BEOL reliability; Cu; TSV structure; back-end-of-line reliability; copper through-silicon vias structure; elastic anisotropy; extrusion profile; grain orientation; grain structure; local plasticity; microstructure effect; Grain size; Microstructure; Reliability; Strain; Stress; Synchrotrons; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

978-1-4799-5016-4

Type

conf

DOI

10.1109/IITC.2014.6831838

Filename

6831838