DocumentCode :
1541830
Title :
MOCVD 
for PCM Applications
Author :
Zheng, J.F. ; Reed, J. ; Schell, C. ; Czubatyj, W. ; Sandoval, R. ; Fournier, J. ; Li, W. ; Hunks, W. ; Dennison, C. ; Hudgens, S. ; Lowrey, T.
Author_Institution :
ATMI Inc., Danbury, CT, USA
Volume :
31
Issue :
9
fYear :
2010
Firstpage :
999
Lastpage :
1001
Abstract :
Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2x reduction of reset current and set resistance were demonstrated compared with equivalent devices using PVD-deposited GST225. The devices show set speeds of 175-260 ns and a ten-year data-retention temperature of 102°C, comparable with devices made using a PVD GST225 alloy. Cycle endurance of up to 7 × 109 was also demonstrated.
Keywords :
MOCVD; antimony compounds; germanium compounds; phase change memories; Ge3Sb2Te5; MOCVD; PVD GST225 alloy; PVD-deposited GST225; phase-change memory devices; reset current; set resistance; size 100 nm; temperature 102 degC; time 175 ns to 260 ns; Atherosclerosis; Atomic layer deposition; Atomic measurements; Doping; Germanium alloys; MOCVD; Phase change materials; Tellurium; Temperature; Tin alloys; GeSbTe (GST); MOCVD; phase-change memory (PCM);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2052233
Filename :
5512601
Link To Document :
