• DocumentCode
    1541830
  • Title

    MOCVD \\hbox {Ge}_{3}\\hbox {Sb}_{2}\\hbox {Te}_{5} for PCM Applications

  • Author

    Zheng, J.F. ; Reed, J. ; Schell, C. ; Czubatyj, W. ; Sandoval, R. ; Fournier, J. ; Li, W. ; Hunks, W. ; Dennison, C. ; Hudgens, S. ; Lowrey, T.

  • Author_Institution
    ATMI Inc., Danbury, CT, USA
  • Volume
    31
  • Issue
    9
  • fYear
    2010
  • Firstpage
    999
  • Lastpage
    1001
  • Abstract
    Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2x reduction of reset current and set resistance were demonstrated compared with equivalent devices using PVD-deposited GST225. The devices show set speeds of 175-260 ns and a ten-year data-retention temperature of 102°C, comparable with devices made using a PVD GST225 alloy. Cycle endurance of up to 7 × 109 was also demonstrated.
  • Keywords
    MOCVD; antimony compounds; germanium compounds; phase change memories; Ge3Sb2Te5; MOCVD; PVD GST225 alloy; PVD-deposited GST225; phase-change memory devices; reset current; set resistance; size 100 nm; temperature 102 degC; time 175 ns to 260 ns; Atherosclerosis; Atomic layer deposition; Atomic measurements; Doping; Germanium alloys; MOCVD; Phase change materials; Tellurium; Temperature; Tin alloys; GeSbTe (GST); MOCVD; phase-change memory (PCM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2052233
  • Filename
    5512601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1541830