Title :
Flip-chip interconnects based on solution deposited carbon nanotube bumps
Author :
Pingye Xu ; Hamilton, Michael C.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
Abstract :
A solution based fabrication process of carbon nanotube (CNT) bump interconnects is proposed. In comparison to CVD growth of CNT which requires high process temperature, the proposed process has the advantage of being capable to fabricate CNT bumps at room temperature with relatively high resolution and adjustable bump height. The average resistance of the fabricated CNT bumps was measured to be 904 mΩ, comparable to the resistance of the transferred CVD grown CNT bumps.
Keywords :
carbon nanotubes; chemical vapour deposition; flip-chip devices; integrated circuit interconnections; integrated circuit manufacture; CNT; CVD; carbon nanotube bump interconnects; fabrication process; flip-chip interconnects; temperature 293 K to 298 K; Carbon nanotubes; Dispersion; Electrical resistance measurement; Fabrication; Flip-chip devices; Resistance; Resists;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831849
