DocumentCode
154204
Title
Flip-chip interconnects based on solution deposited carbon nanotube bumps
Author
Pingye Xu ; Hamilton, Michael C.
Author_Institution
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
fYear
2014
fDate
20-23 May 2014
Firstpage
147
Lastpage
150
Abstract
A solution based fabrication process of carbon nanotube (CNT) bump interconnects is proposed. In comparison to CVD growth of CNT which requires high process temperature, the proposed process has the advantage of being capable to fabricate CNT bumps at room temperature with relatively high resolution and adjustable bump height. The average resistance of the fabricated CNT bumps was measured to be 904 mΩ, comparable to the resistance of the transferred CVD grown CNT bumps.
Keywords
carbon nanotubes; chemical vapour deposition; flip-chip devices; integrated circuit interconnections; integrated circuit manufacture; CNT; CVD; carbon nanotube bump interconnects; fabrication process; flip-chip interconnects; temperature 293 K to 298 K; Carbon nanotubes; Dispersion; Electrical resistance measurement; Fabrication; Flip-chip devices; Resistance; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
978-1-4799-5016-4
Type
conf
DOI
10.1109/IITC.2014.6831849
Filename
6831849
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