Title :
Light Output Extraction Enhancement in GaN-Based Green LEDs With Periodic AZO Subwavelength Nanostructure Arrays
Author :
Joo, Dong Hyuk ; Lee, Hee Kwan ; Yu, Jae Su
Author_Institution :
Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yongin, South Korea
Abstract :
We experimentally and theoretically demonstrate the enhancement in the light extraction efficiency of InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) through periodic aluminum-doped zinc oxide (AZO) subwavelength nanostructure arrays (SNAs). The AZO SNAs are formed on the surface of indium tin oxide electrodes of LEDs by laser interference lithography and a subsequent dry etching after AZO film deposition. For LEDs with AZO SNAs, the light output power is increased by 19% at 100 mA compared to the conventional LED on patterned sapphire substrate. Also, there is no distinct degradation in the electrical characteristics of LEDs.
Keywords :
III-V semiconductors; aluminium; gallium compounds; laser materials processing; light emitting diodes; light interference; nanolithography; nanostructured materials; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; AZO SNA; AZO film deposition; AZO subwavelength; Al2O3; ITO; InGaN-GaN; InGaN-GaN multiple quantum well; ZnO:Al; aluminum-doped zinc oxide subwavelength nanostructure arrays; conventional LED; current 100 mA; dry etching; electrical characteristics; gan-based green LEDs; green light-emitting diodes; indium tin oxide electrode surface; laser interference lithography; light extraction efficiency enhancement; light output extraction enhancement; patterned sapphire substrate; Gallium nitride; Indium tin oxide; Light emitting diodes; Lithography; Quantum well devices; Refractive index; Substrates; Aluminum-doped zinc oxides (AZO); GaN-based green light-emitting diodes (LEDs); laser interference lithography; light extraction; subwavelength nanostructure arrays (SNAs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2204869
