Title :
Fabrication of high IcRn YBCO ramp junctions using Ga doped Pr-Ba-Cu-O barriers at 65 K
Author :
Hu, R. ; Chan, H.W. ; Murduck, J.M. ; Sergant, M. ; Pettiette-Hall, C.L. ; Bulman, J. ; Luine, J.L.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
Yttrium Barium Copper Oxide ramp junctions have been fabricated via off-axis rf magnetron sputtering using Praseodymium Barium Copper Gallium Oxide as a barrier material. Optimal wafer processing conditions and junction behavior as a function of barrier thickness are presented. IcRn values of 500 microvolts at 65 K have been achieved with a two step deposition/anneal process using Praseodymium Barium Copper Gallium Oxide as the barrier. This junction process has been demonstrated on 2 inch wafers.
Keywords :
Josephson effect; annealing; barium compounds; high-temperature superconductors; praseodymium compounds; sputtered coatings; superconducting thin films; yttrium compounds; 65 K; Ga doped Pr-Ba-Cu-O barrier; Josephson junction; RF magnetron sputtering; YBCO ramp junction; YBaCuO-PrBaCuO:Ga; annealing; critical current-normal resistance product; fabrication; thin film deposition; wafer processing; Conductivity; Critical current; Etching; Fabrication; Gallium; Guns; Magnetic materials; Substrates; Tunneling; Yttrium barium copper oxide;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
