Title :
Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
Author :
Stiff, Adrienne D. ; Krishna, Sanjay ; Bhattacharya, Pallab ; Kennerly, Stephen W.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fDate :
11/1/2001 12:00:00 AM
Abstract :
The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs-GaAs vertical quantum-dot infrared photodetector with a single Al0.3 Ga0.7As current-blocking barrier are described and discussed in detail. A specific detectivity ≈3×109 cmHz1/2/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array
Keywords :
III-V semiconductors; focal planes; gallium arsenide; indium compounds; infrared detectors; low-temperature techniques; semiconductor quantum dots; 0.2 V; 100 K; 150 K; Al0.3Ga0.7As; InAs-GaAs; detector temperature; focal plane array; low bias performance; normal-incidence high-temperature mid-IR InAs-GaAs vertical quantum-dot photodetector; optical fabrication; semiconductor growth; silicon read-out circuits; single Al0.3Ga0.7As current-blocking barrier; specific detectivity; Cadmium compounds; Fabrication; High-resolution imaging; Infrared detectors; Laboratories; Photodetectors; Quantum dots; Sensor arrays; Silicon; Temperature measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
