Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector

Author

Stiff, Adrienne D. ; Krishna, Sanjay ; Bhattacharya, Pallab ; Kennerly, Stephen W.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

Volume

37

Issue

11

fYear

2001

fDate

11/1/2001 12:00:00 AM

Firstpage

1412

Lastpage

1419

Abstract

The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs-GaAs vertical quantum-dot infrared photodetector with a single Al_0.3Ga_0.7As current-blocking barrier are described and discussed in detail. A specific detectivity ≈3×10⁹ cmHz^1/2/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array

Keywords

III-V semiconductors; focal planes; gallium arsenide; indium compounds; infrared detectors; low-temperature techniques; semiconductor quantum dots; 0.2 V; 100 K; 150 K; Al_0.3Ga_0.7As; InAs-GaAs; detector temperature; focal plane array; low bias performance; normal-incidence high-temperature mid-IR InAs-GaAs vertical quantum-dot photodetector; optical fabrication; semiconductor growth; silicon read-out circuits; single Al_0.3Ga_0.7As current-blocking barrier; specific detectivity; Cadmium compounds; Fabrication; High-resolution imaging; Infrared detectors; Laboratories; Photodetectors; Quantum dots; Sensor arrays; Silicon; Temperature measurement;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.958360

Filename

958360