$\hbox {PbZr}_{x}\hbox {Ti}_{1 - x}\hbox {O}_{3}$ Ferroelectric Thin-Film Capacitors for Flexible Nonvolatile Memory Applications

This letter reports the fabrication of PbZr_xTi_1-xO₃ (PZT) thin-film capacitors on flexible plastic substrates. The PZT film was formed on a wafer using a sol-gel method and transferred to a thin plastic substrate using an elastomeric stamp. The PZT film on the plastic substrate showed a well-saturated hysteresis loop with a P_r of ~ 20μC/cm² and a V_c of ~1.1 V at a supplied voltage of 3 V, which are similar to those observed for PZT films on rigid wafers, as well as stable operation under an 8-mm bending radius. These characteristics suggest promising applications in flexible electronic systems.