Experimental study and modeling of the white noise sources in submicron Pand N-MOSFETs

Author

Re, V. ; Bietti, I. ; Castello, R. ; Manghisoni, M. ; Speziali, V. ; Svelto, F.

Author_Institution

Dipt. di Ingegneria, Univ. di Bergamo, Dalmine, Italy

Volume

48

Issue

4

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1577

Lastpage

1586

Abstract

This paper presents the results of the experimental characterization of the channel thermal noise in MOSFETs belonging to a submicron gate process, with minimum gate length L=0.35 μm. The data are compared with a noise model taking into account short-channel effects such as velocity saturation and hot carriers. The contribution of gate and substrate parasitic resistors is also evaluated and included in the model. The analysis is carried out for devices with various gate geometries, investigating the behavior of the noise-related parameters in the range of small gate-to-source overdrive voltages, which is of major concern for low-power circuits

Keywords

MOSFET; hot carriers; nuclear electronics; semiconductor device models; semiconductor device noise; thermal noise; channel thermal noise; gate geometries; gate-to-source overdrive voltages; hot carriers; low-power circuits; noise-related parameters; short-channel effects; submicron N-MOSFETs; submicron P-MOSFETs; submicron gate process; substrate parasitic resistors; velocity saturation; white noise sources; CMOS technology; Circuit noise; Detectors; Equations; Geometry; Hot carriers; MOSFET circuits; Semiconductor device modeling; Voltage; White noise;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.958399

Filename

958399