DocumentCode :
1542447
Title :
Light Output Enhancement of GaN-Based Light-Emitting Diodes Using ZnO Nanorod Arrays Produced by Aqueous Solution Growth Technique
Author :
Dalui, Saikat ; Lin, Chih-Chien ; Lee, Hsin-Ying ; Chao, Chia-Hsin ; Lee, Ching-Ting
Author_Institution :
Dept. of Electro-Opt. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
22
Issue :
16
fYear :
2010
Firstpage :
1220
Lastpage :
1222
Abstract :
ZnO nanorod arrays were successfully deposited on GaN-based light-emitting diodes (LEDs) using the aqueous solution growth technique. A 20.3% light output enhancement of the LEDs with ZnO nanorod array was obtained at an injection current of 100 mA. With the presence of the ZnO nanorod array, divergence of the light output was reduced and the light output was confined in a smaller escape cone of about 30 ^{\\circ} rather than 42 ^{\\circ} of the conventional LEDs. Current–voltage characteristics and electroluminescence measurements confirmed that there was no significant change in electrical and optical properties of these LEDs with ZnO nanorod arrays.
Keywords :
Chaos; Gallium nitride; Light emitting diodes; MOCVD; Optical arrays; Optical reflection; Quantum well devices; Rough surfaces; Surface roughness; Zinc oxide; Aqueous solution growth techniques; GaN-based light-emitting diodes (LEDs); ZnO nanorod arrays; divergence angle;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2052795
Filename :
5512704
Link To Document :
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