Title :
Challenges to via middle TSV integration at sub-28nm nodes
Author :
Kamineni, Himani Suhag ; Kannan, S. ; Alapati, Ramakanth ; Thangaraju, Sara ; Smith, D. ; Dingyou Zhang ; Shan Gao
Author_Institution :
GLOBALFOUNDRIES, Inc., Malta, NY, USA
Abstract :
This work presents the via middle TSV integration at sub-28 nm nodes using a new local interconnect scheme involving V0 vias. Various V0 schemes are presented along with their respective resistance, capacitance and leakage current data. The characterization and reliability results are presented through TSV daisy chain structures and MOL via chains.
Keywords :
integrated circuit interconnections; leakage currents; three-dimensional integrated circuits; MOL via chains; TSV daisy chain structures; leakage current data; local interconnect scheme; size 28 nm; via middle TSV integration; Copper; Current measurement; Electrical resistance measurement; Leakage currents; Resistance; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831869
