• DocumentCode
    1542458
  • Title

    Metastability of CMOS latch/flip-flop

  • Author

    Kim, Lee-Sup ; Dutton, Robert W.

  • Author_Institution
    Stanford Univ., CA, USA
  • Volume
    25
  • Issue
    4
  • fYear
    1990
  • fDate
    8/1/1990 12:00:00 AM
  • Firstpage
    942
  • Lastpage
    951
  • Abstract
    Optimal device size, aspect ratio, and configurations for the design of the metastable hardened CMOS latch/flip-flops are obtained by using the AC small-signal analysis in the frequency domain instead of the usual time-domain approach. The Miller effect on the metastability is investigated for the configurations which have a better metastable resolving capability. The mean time between failure (MTBF) was measured, and the result verifies this new design approach. The power supply disturbance and temperature variation effects on the metastability were also measured, and the data show that a 0.75-V change of power supply voltage and 75°C change of chip temperature cause a four orders of magnitude difference in the MTBF. The simulation results using the AC small-signal frequency-domain analysis agree well with the measurement data for the different power supply voltages and chip temperatures, confirming that an AC small-signal approach can be used more widely for the design of metastable hardened latch/flip-flops. The other parameters are discussed in terms of their effects on the latch/flip-flop´s susceptibility to the metastable state
  • Keywords
    CMOS integrated circuits; circuit reliability; failure analysis; frequency-domain analysis; integrated logic circuits; logic design; AC small-signal analysis; CMOS latch; MTBF; Miller effect; chip temperatures; design approach; flip-flop; frequency-domain analysis; logic circuits; mean time between failure; metastability; metastable hardened circuit; optimal aspect ratio; optimal device size; power supply disturbance; supply voltages; temperature variation effects; Flip-flops; Frequency domain analysis; Metastasis; Power measurement; Power supplies; Semiconductor device measurement; Temperature; Time domain analysis; Time measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.58286
  • Filename
    58286