DocumentCode
1542458
Title
Metastability of CMOS latch/flip-flop
Author
Kim, Lee-Sup ; Dutton, Robert W.
Author_Institution
Stanford Univ., CA, USA
Volume
25
Issue
4
fYear
1990
fDate
8/1/1990 12:00:00 AM
Firstpage
942
Lastpage
951
Abstract
Optimal device size, aspect ratio, and configurations for the design of the metastable hardened CMOS latch/flip-flops are obtained by using the AC small-signal analysis in the frequency domain instead of the usual time-domain approach. The Miller effect on the metastability is investigated for the configurations which have a better metastable resolving capability. The mean time between failure (MTBF) was measured, and the result verifies this new design approach. The power supply disturbance and temperature variation effects on the metastability were also measured, and the data show that a 0.75-V change of power supply voltage and 75°C change of chip temperature cause a four orders of magnitude difference in the MTBF. The simulation results using the AC small-signal frequency-domain analysis agree well with the measurement data for the different power supply voltages and chip temperatures, confirming that an AC small-signal approach can be used more widely for the design of metastable hardened latch/flip-flops. The other parameters are discussed in terms of their effects on the latch/flip-flop´s susceptibility to the metastable state
Keywords
CMOS integrated circuits; circuit reliability; failure analysis; frequency-domain analysis; integrated logic circuits; logic design; AC small-signal analysis; CMOS latch; MTBF; Miller effect; chip temperatures; design approach; flip-flop; frequency-domain analysis; logic circuits; mean time between failure; metastability; metastable hardened circuit; optimal aspect ratio; optimal device size; power supply disturbance; supply voltages; temperature variation effects; Flip-flops; Frequency domain analysis; Metastasis; Power measurement; Power supplies; Semiconductor device measurement; Temperature; Time domain analysis; Time measurement; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.58286
Filename
58286
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