12-Gb/s decision circuit IC using AlGaAs/GaAS HBT technology

Author

Ichino, Haruhiko ; Ishihara, Noboru ; Yamauchi, Yoshiki ; Nakajima, Osaake ; Nagata, Koichi ; Nittono, Takumi

Author_Institution

NTT, Kanagawa, Japan

Volume

25

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1538

Lastpage

1543

Abstract

Circuit technology that achieves a high-bit-rate decision circuit with high input sensitivity for application to future optical communication systems by using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is reviewed. This technology includes a highly accurate transistor model expressing the overshoot effect and a novel circuit configuration with a wideband preamplifier and an internal buffer. The decision IC operates at up to 12 Gb/s, using AlGaAs/GaAs HBTs with f_T of 40 GHz. A good sensitivity of 71 mV _p-p and a wide phase margin of 217° at 11 Gb/s is also achieved under error-free conditions (less than 10^-9 errors)

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital communication systems; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; optical communication equipment; 12 Gbit/s; 40 GHz; AlGaAs-GaAs; D-latch; ECL series gating technique; HBT technology; decision circuit IC; heterojunction bipolar transistors; high-bit-rate; internal buffer; optical communication systems; overshoot effect; transistor model; wideband preamplifier; Broadband amplifiers; Circuits; Contact resistance; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Optical amplifiers; Optical buffering; Optical receivers; Optical sensors;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.62190

Filename

62190