• DocumentCode
    1542638
  • Title

    A high-sensitivity MOS photo-transistor for area image sensor

  • Author

    Matsunaga, Yoshiyuki ; Yamashita, Hirofumi ; Manabe, Sohei ; Harada, Nozomu

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • Volume
    38
  • Issue
    5
  • fYear
    1991
  • fDate
    5/1/1991 12:00:00 AM
  • Firstpage
    1044
  • Lastpage
    1047
  • Abstract
    A new MOS phototransistor, called a double-gate floating surface phototransistor, has been fabricated and evaluated. In the phototransistor cell, the gate area has been divided into two parts, the accumulation section and the detection section, in order to realize a low input capacitance for a high optical gain. The device achieved a noise equivalent exposure of 2×10-4 lx at 16-ms integration time and a dynamic range of 75 dB with a new line potential modulation operation
  • Keywords
    MOS integrated circuits; image sensors; phototransistors; 16 ms; MOS phototransistor; accumulation section; area image sensor; detection section; double-gate floating surface phototransistor; dynamic range; gate area; integration time; line potential modulation; low input capacitance; noise equivalent exposure; optical gain; Capacitance; Charge coupled devices; Charge-coupled image sensors; Image sensors; MOSFETs; Optical noise; Optical sensors; Photodiodes; Pixel; Sensor arrays;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.78377
  • Filename
    78377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1542638