Title :
A high-sensitivity MOS photo-transistor for area image sensor
Author :
Matsunaga, Yoshiyuki ; Yamashita, Hirofumi ; Manabe, Sohei ; Harada, Nozomu
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
5/1/1991 12:00:00 AM
Abstract :
A new MOS phototransistor, called a double-gate floating surface phototransistor, has been fabricated and evaluated. In the phototransistor cell, the gate area has been divided into two parts, the accumulation section and the detection section, in order to realize a low input capacitance for a high optical gain. The device achieved a noise equivalent exposure of 2×10-4 lx at 16-ms integration time and a dynamic range of 75 dB with a new line potential modulation operation
Keywords :
MOS integrated circuits; image sensors; phototransistors; 16 ms; MOS phototransistor; accumulation section; area image sensor; detection section; double-gate floating surface phototransistor; dynamic range; gate area; integration time; line potential modulation; low input capacitance; noise equivalent exposure; optical gain; Capacitance; Charge coupled devices; Charge-coupled image sensors; Image sensors; MOSFETs; Optical noise; Optical sensors; Photodiodes; Pixel; Sensor arrays;
Journal_Title :
Electron Devices, IEEE Transactions on
