Title :
Bottom-up copper deposition in alkaline electrolytes
Author :
Josell, D. ; Moffat, T.P.
Author_Institution :
Mater. Sci. & Eng. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Superconformal electrodeposition enables the fabrication of high aspect ratio interconnects that are ubiquitous in microelectronics. The Curvature Enhanced Accelerator Coverage (CEAC) mechanism captures the morphological and kinetic aspects of many “superfilling” processes for Damascene interconnect fabrication [1-4]. Present superfilling copper electrolytes are acidic. Alkaline chemistries might rely on a non-CEAC filling mechanism.
Keywords :
copper; electrodeposition; integrated circuit interconnections; Cu; Damascene interconnect fabrication; acidic; alkaline chemistries; alkaline electrolytes; bottom-up copper deposition; copper electrolytes; curvature enhanced accelerator coverage; high aspect ratio interconnects fabrication; microelectronics; superconformal electrodeposition; Additives; Current density; Electric potential; Filling; Rough surfaces; Surface treatment; System-on-chip;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831880
