Bottom-up copper deposition in alkaline electrolytes

Author

Josell, D. ; Moffat, T.P.

Author_Institution

Mater. Sci. & Eng. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2014

fDate

20-23 May 2014

Firstpage

281

Lastpage

284

Abstract

Superconformal electrodeposition enables the fabrication of high aspect ratio interconnects that are ubiquitous in microelectronics. The Curvature Enhanced Accelerator Coverage (CEAC) mechanism captures the morphological and kinetic aspects of many “superfilling” processes for Damascene interconnect fabrication [1-4]. Present superfilling copper electrolytes are acidic. Alkaline chemistries might rely on a non-CEAC filling mechanism.

Keywords

copper; electrodeposition; integrated circuit interconnections; Cu; Damascene interconnect fabrication; acidic; alkaline chemistries; alkaline electrolytes; bottom-up copper deposition; copper electrolytes; curvature enhanced accelerator coverage; high aspect ratio interconnects fabrication; microelectronics; superconformal electrodeposition; Additives; Current density; Electric potential; Filling; Rough surfaces; Surface treatment; System-on-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

978-1-4799-5016-4

Type

conf

DOI

10.1109/IITC.2014.6831880

Filename

6831880

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=154267