Title :
Investigation pre-amorphization implantation on nickel silicide formation
Author :
Pin Hong Chen ; Chia Chang Hsu ; Lai, Jih-Sheng ; Liao, Bo ; Chun Ling Lin ; Huang, Olivia ; Chun Chieh Chiu ; Hsu, C.M. ; Wu, J.Y.
Author_Institution :
UMC, Tainan, Taiwan
Abstract :
Pre-amorphization implantation (PAI) of various energy and dosage are used on Ni-Silicide formation, which has achieved amorphism-like NiSi films. The electric characteristic, physical morphology and metallurgical of the NiSi were identified by sheet resistance, grazing incident X-ray diffraction (GIXRD), and selected-area electron diffraction (SAD) analysis. Result shows that lower energy and higher dosage of ion implantation can get amorphism-like NiSi film.
Keywords :
X-ray diffraction; electron diffraction; ion implantation; metallurgy; nickel compounds; thin films; GIXRD; NiSi; SAD analysis; amorphism-like NiSi films; amorphization implantation; electric characteristics; grazing incident X-ray diffraction; ion implantation dosage; metallurgical mechansim; nickel silicide formation; physical morphology; selected-area electron diffraction; sheet resistance; Abstracts; Ions; Nickel; Silicides; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831887
