Title :
Study of a single layer ultrathin CoMo film as a direct plateable adhesion/barrier layer for next generation interconnect
Author :
Xin-Ping Qu ; Xu Wang ; Li-Ao Cao ; Wen-Zhong Xu
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
In this work, a novel single layer CoMo alloy film is investigated as an excellent adhesion/diffusion barrier to copper metallization. The ultrathin (<;3nm) CoMo film can withstand 400°C/30min annealing on the ULK(k =2.25) and the electrical barrier properties on the p-cap SiO2 structure for the Cu/CoMo can be even better than the Cu/Ta/TaN structure. The CMP of the CoMo film are studied and the direct Cu electroplating on the CoMo film are demonstrated.
Keywords :
annealing; cobalt alloys; electroplating; integrated circuit interconnections; metallisation; molybdenum alloys; tantalum compounds; Cu-CoMo; Cu-Ta-TaN; SiO2; annealing; copper metallization; direct plateable adhesion/barrier layer; electroplating; next generation interconnect; single layer ultrathin film; temperature 400 C; time 30 min; Abstracts; Adhesives; Annealing; Copper; FCC; Films; Silicon;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831889
