Title :
A JFET-CMOS radiation-tolerant charge-sensitive preamplifier
Author :
Buttler, Werner ; Hosticka, Bedrich J. ; Lutz, Gerhard ; Manfredi, Pier F.
Author_Institution :
Fraunhofer Inst. of Microelectron., Circuits & Syst., Duisburg, West Germany
fDate :
8/1/1990 12:00:00 AM
Abstract :
A monolithic charge-sensitive preamplifier based on n-channel junction field-effect transistors (JFETs) and p-channel MOS has been realized for applications with microelectrode detectors in elementary particle physics. Radiation resistance tests carried out with the preamplifier exposed to γ-rays emitted by a 60Co source have shown no significant increase of the equivalent noise source up to 150-krd absorbed dose
Keywords :
CMOS integrated circuits; gamma-ray effects; junction gate field effect transistors; monolithic integrated circuits; nuclear electronics; preamplifiers; radiation hardening (electronics); 1.5×105 rad; JFET-CMOS; charge-sensitive; elementary particle physics; gamma ray exposure; junction field-effect transistors; microelectrode detectors; monolithic amplifier; n-channel JFET; n-well CMOS process; p-channel MOS; preamplifier; radiation-tolerant; CMOS process; CMOS technology; Detectors; Frequency; JFETs; Latches; MOSFETs; Master-slave; Preamplifiers; SPICE;
Journal_Title :
Solid-State Circuits, IEEE Journal of
