Title :
Comments on `A compact thermal noise model for the investigation of soft error rates in MOS VLSI digital circuits´
Author :
Kolodziejski, Jerzy F. ; Spiralski, Ludwik
Author_Institution :
Inst. of Electron. Technol., Warsaw, Poland
fDate :
8/1/1990 12:00:00 AM
Abstract :
For the original article see ibid., vol.24, no.1, p.78-89 (1989). In the above-title paper by P.D. Layman and S.G. Chamberlain, the mean-square noise voltage of a MOSFET transistor was determined in the frequency range Δf=2.2/(2πtsen)=0.35(1/t sen), whereas the mean-square value (and consequently the RMS) of thermal noise in the RC circuit was determined over an infinite frequency range. The commenter examines the implications of this approach to draw attention to a few questions that can significantly influence the accuracy of results in the course of consideration of noise in electronic circuits
Keywords :
MOS integrated circuits; VLSI; digital integrated circuits; electron device noise; errors; semiconductor device models; thermal noise; MOS VLSI digital circuits; MOSFET transistor; RMS; compact thermal noise model; mean-square noise voltage; soft error rates; Bandwidth; Capacitors; Circuit noise; Decoding; Error analysis; Frequency; Signal to noise ratio; Very large scale integration; Viterbi algorithm; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of