Title :
Resistance reduction of CNTs on 300-mm wafer by using two precursors with different growth methods
Author :
Saito, Takashi ; Wada, Masaki ; Isobayashi, Atsunobu ; Nishide, Daisuke ; Ito, Ban ; Yamazaki, Yasuyuki ; Matsumoto, Tad ; Sakuma, Naoshi ; Kajita, Akihiro ; Sakai, Tadashi
Author_Institution :
Low-Power Electron. Assoc. & Project, Tsukuba, Japan
Abstract :
The process conditions for improving the electrical properties of carbon nanotubes (CNTs) were investigated by using a blanket-structure method for quantifying CNT resistance independently. The growth mechanism of CNTs formed with two different gas precursors was investigated from the viewpoint of crystallinity, growth-length uniformity, and resistance. Although the formed CNTs still require further improvements to obtain a ballistic transport property, it was found that the resistance of CNTs is reduced by using a two-step growth method that produces a multi-wall CNT structure and a uniform micrometer-order growth length.
Keywords :
carbon nanotubes; crystal growth; electric properties; CNT resistance; ballistic transport property; blanket-structure method; carbon nanotubes; crystallinity; electrical properties; gas precursors; growth-length uniformity; multiwall CNT structure; process conditions; resistance reduction; size 300 mm; two-step growth method; uniform micrometer-order growth length; Electrical resistance measurement; Electrodes; Nickel; Plasma temperature; Resistance; Temperature; Tin;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831899
