Title :
400 dpi integrated contact type linear image sensors with poly-Si TFT´s analog readout circuits and dynamic shift registers
Author :
Kaneko, Toshiki ; Hosokawa, Yoshikazu ; Tadauchi, Masaharu ; Kita, Yoshiaki ; Andoh, Hisashi
Author_Institution :
Hitachi Ltd., Ibaraki, Japan
fDate :
5/1/1991 12:00:00 AM
Abstract :
Four-hundred-dots-per-inch (dpi) sensors, including poly-Si thin-film-transistor (TFT) scanning circuits, and a-Si photodiodes fabricated on borosilicate glass have been developed. This contact-type image sensor contains TFT analog buffer amplifiers in the readout circuits. The scanning circuits can operate in a frequency range between 200 kHz and 1 MHz. The readout circuits incorporating TFT analog impedance converters decrease photodiode impedance by more than three orders of magnitude and improve the linearity between illumination intensity and the sensor output. High-resolution reading is achieved by the new contact-type linear image sensors with a storage time of 2 ms/line
Keywords :
MOS integrated circuits; image sensors; thin film transistors; 2 ms; 200 to 1000 kHz; B2O3-SiO2; BSG; TFT analog buffer amplifiers; TFT analog impedance converters; amorphous Si photodiodes; analog readout circuits; contact-type image sensor; dynamic shift registers; frequency range; glass; linear image sensors; linearity; polysilicon TFTs; scanning circuits; Circuits; Frequency; Glass; Image sensors; Image storage; Impedance; Lighting; Linearity; Photodiodes; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
