Characterization and Modeling of Hot Carrier-Induced Variability in Subthreshold Region

Author

Magnone, Paolo ; Crupi, Felice ; Wils, Nicole ; Tuinhout, Hans P. ; Fiegna, Claudio

Author_Institution

ARCES, Univ. of Bologna, Cesena, Italy

Volume

59

Issue

8

fYear

2012

Firstpage

2093

Lastpage

2099

Abstract

We developed an analytical model that is able to predict the evolution of the subthreshold slope variability associated with hot carrier (HC) stress. The model assumes that HC stress generates interface states with a Poisson distribution and that the number of HC-induced interface states increases linearly with the HC-induced subthreshold slope variation. We validate the model by means of extensive variability data sets collected on n-channel MOSFETs in 45- and 65-nm CMOS technologies. Furthermore, we investigate the correlation between the threshold voltage and the subthreshold slope fluctuations in order to fully characterize their impact on the subthreshold current variability.

Keywords

CMOS integrated circuits; MOSFET; Poisson distribution; hot carriers; interface states; power supplies to apparatus; CMOS technology; HC-induced interface state; HC-induced subthreshold slope variation; Poisson distribution; hot carrier stress; hot carrier-induced variability; n-channel MOSFET; size 45 nm to 65 nm; subthreshold current variability; subthreshold slope fluctuation; subthreshold slope variability; Correlation; Interface states; Logic gates; Standards; Stress; Threshold voltage; Voltage measurement; Hot carrier; MOSFET; mismatch; subthreshold slope; threshold voltage; variability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2200683

Filename

6220242