4-band×4096-element Schottky-barrier infrared linear image sensor

Author

Denda, Masahiko ; Kimata, Masafumi ; Iwade, Shuhei ; Yutani, Naoki ; Kondo, Takashi ; Toubouchi, Natsuro

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1131

Lastpage

1135

Abstract

A multispectral linear array has been developed for remote-sensing applications in the short-wavelength (SW) infrared (IR) band. The device is a monolithic quadruple-band image sensor, consisting of 4096 detectors for each band. The SW-IR sensor uses silicon Schottky-barrier (SB) infrared charge-coupled-device (IRCCD) technology. Platinum silicide SB detectors are used. They operate at cryogenic temperature and respond to the short- and middle-wavelength infrared regions. The package for the SW-IRCCD has also been developed. The package has a SiC-Al₂O₃-SiC structure. The performance of the device has been measured, and the device can be used in spaceborne applications

Keywords

CCD image sensors; Schottky effect; packaging; remote sensing; 4096 pixel; IRCCD technology; PtSi; Schottky-barrier; SiC-Al₂O₃-SiC structure; cryogenic temperature; infrared charge-coupled-device; infrared linear image sensor; middle-wavelength infrared regions; monolithic type; multispectral linear array; package; quadruple-band; remote-sensing applications; short wavelength IR sensor; spaceborne applications; Cryogenics; Detectors; Image sensors; Infrared imaging; Infrared sensors; Packaging; Platinum; Remote sensing; Silicides; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78389

Filename

78389