Title :
Reliability of microwave SiGe/Si heterojunction bipolar transistors
Author :
Ma, Zhenqiang ; Bhattacharya, Pallab ; Rieh, Jae-Sung ; Ponchak, George E. ; Alterovitz, Samuel A. ; Croke, Edward T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.
Keywords :
Ge-Si alloys; diffusion; elemental semiconductors; heterojunction bipolar transistors; life testing; microwave bipolar transistors; molecular beam epitaxial growth; semiconductor device reliability; semiconductor device testing; semiconductor materials; silicon; DC current gain; SiGe-Si; SiGe/Si heterojunction bipolar transistor; accelerated lifetime testing; microwave characteristics; parasitic energy barrier; recombination enhanced impurity diffusion; reliability; solid-source molecular beam epitaxy; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Life estimation; Life testing; Microwave devices; Molecular beam epitaxial growth; Performance gain; Silicon germanium; Temperature;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.959308
