Title :
Gain coupled DFB lasers with active layer grown on a corrugated substrate by molecular beam epitaxy
Author :
Robadey, J. ; Martin, D. ; Glick, M. ; Silva, P.C. ; Jouneau, P.-H. ; Marti, U. ; Reinhart, F.K.
Author_Institution :
Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
fDate :
2/13/1997 12:00:00 AM
Abstract :
Using in situ hydrogen desorption before the growth of the 12 nm thick active InGaAs layer over V-grooves, operation of gain coupled DFB lasers at 989 nm is achieved at room temperature. As-cleaved lasers, 600 μm long, have threshold current densities as low as 250 A/cm2 and typical sidemode suppression ratios of 40 dB
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 12 nm; 600 micron; 989 nm; InGaAs; V-grooves; active layer; corrugated substrate; gain coupled DFB lasers; molecular beam epitaxy; sidemode suppression ratios; threshold current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970214
