• DocumentCode
    1543474
  • Title

    Gain coupled DFB lasers with active layer grown on a corrugated substrate by molecular beam epitaxy

  • Author

    Robadey, J. ; Martin, D. ; Glick, M. ; Silva, P.C. ; Jouneau, P.-H. ; Marti, U. ; Reinhart, F.K.

  • Author_Institution
    Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland
  • Volume
    33
  • Issue
    4
  • fYear
    1997
  • fDate
    2/13/1997 12:00:00 AM
  • Firstpage
    297
  • Lastpage
    298
  • Abstract
    Using in situ hydrogen desorption before the growth of the 12 nm thick active InGaAs layer over V-grooves, operation of gain coupled DFB lasers at 989 nm is achieved at room temperature. As-cleaved lasers, 600 μm long, have threshold current densities as low as 250 A/cm2 and typical sidemode suppression ratios of 40 dB
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 12 nm; 600 micron; 989 nm; InGaAs; V-grooves; active layer; corrugated substrate; gain coupled DFB lasers; molecular beam epitaxy; sidemode suppression ratios; threshold current densities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970214
  • Filename
    583485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1543474