Title :
Low-temperature grown GaAs probe for ultrafast electrical signal measurement
Author :
Takeuchi, K. ; Mizuhara, A.
Author_Institution :
Teratec Corp., Tokyo, Japan
fDate :
2/13/1997 12:00:00 AM
Abstract :
A new measurement system for ultrafast electrical signals using a scanning force microscope (SFM) has been developed. The key of the system is a GaAs probe with a photoconductive semiconductor switch (PCSS) which is used as a sampler in an optical sampling procedure. The probe fabrication process and the result of a 2.4 ps pulse measurement have been reported here
Keywords :
gallium arsenide; 2.4 ps; GaAs; SFM; low-temperature grown GaAs probe; optical sampling procedure; photoconductive semiconductor switch; probe fabrication process; pulse measurement; sampler; scanning force microscope; ultrafast electrical signal measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970197
