Title :
1.26 W CW diffraction-limited InGaAsP flared amplifier at 780 nm
Author :
O´Brien, Stephen ; Geels, R.S. ; Plano, W.E. ; Lang, Robert J.
Author_Institution :
SDL Inc., San Jose, CA
fDate :
2/13/1997 12:00:00 AM
Abstract :
Flared amplifiers fabricated with InGaAsP alloys have produced 1.26 W CW at a wavelength of 780 nm in a single-lobed, diffraction-limited far field pattern. Under quasi-CW conditions, 2.4 W of diffraction-limited power has been obtained. This represents the highest diffraction-limited power reported at 780 nm and the highest diffraction-limited power reported in the InGaAsP material system
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 1.26 W; 2.4 W; 780 nm; CW InGaAsP flared amplifier; InGaAsP; InGaAsP flared amplifier; diffraction-limited far field pattern; diffraction-limited power; quasi-CW conditions; single-lobed far field pattern;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970216
