Title :
Effect of channel thickness on linearity of double pulse doped AlInAs/GaInAs/InP HEMTs
Author :
Hur, K.Y. ; Hetzler, K.T. ; McTaggart, R.A. ; Lemonias, P.J. ; Hoke, W.E.
Author_Institution :
Res. Labs., Raytheon Electron., Andover, MA, USA
fDate :
2/13/1997 12:00:00 AM
Abstract :
The effect of channel thickness on device characteristics was explored using double pulse doped AlInAs/GaInAs/InP HEMTs. On-wafer RF characterisation results revealed that the transconductance variation with gate voltage can be significantly minimised by increasing the channel thickness. However, a tradeoff between linearity and peak unity current gain cutoff frequency exists as a result of increased average separation between the gate and the 2D electron gas
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; two-dimensional electron gas; 0.25 micron; 2D electron gas; AlInAs-GaInAs-InP; HEMT linearity; HEMTs; channel thickness; device characteristics; double pulse doping; gate voltage; onwafer RF characterisation; peak unity current gain cutoff frequency; transconductance variation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970232
