DocumentCode
1543598
Title
Effect of channel thickness on linearity of double pulse doped AlInAs/GaInAs/InP HEMTs
Author
Hur, K.Y. ; Hetzler, K.T. ; McTaggart, R.A. ; Lemonias, P.J. ; Hoke, W.E.
Author_Institution
Res. Labs., Raytheon Electron., Andover, MA, USA
Volume
33
Issue
4
fYear
1997
fDate
2/13/1997 12:00:00 AM
Firstpage
331
Lastpage
332
Abstract
The effect of channel thickness on device characteristics was explored using double pulse doped AlInAs/GaInAs/InP HEMTs. On-wafer RF characterisation results revealed that the transconductance variation with gate voltage can be significantly minimised by increasing the channel thickness. However, a tradeoff between linearity and peak unity current gain cutoff frequency exists as a result of increased average separation between the gate and the 2D electron gas
Keywords
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; two-dimensional electron gas; 0.25 micron; 2D electron gas; AlInAs-GaInAs-InP; HEMT linearity; HEMTs; channel thickness; device characteristics; double pulse doping; gate voltage; onwafer RF characterisation; peak unity current gain cutoff frequency; transconductance variation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970232
Filename
583508
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